FCD360N65S3R0

Category : Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs

FET Feature : -

Vgs(th) (Max) @ Id : 4.5V @ 1mA

Operating Temperature : -55°C ~ 150°C (TJ)

Package / Case : TO-252-3, DPak (2 Leads + Tab), SC-63

Gate Charge (Qg) (Max) @ Vgs : 18 nC @ 10 V

Rds On (Max) @ Id, Vgs : 360mOhm @ 5A, 10V

FET Type : N-Channel

Drive Voltage (Max Rds On, Min Rds On) : 10V

Package : Tape & Reel (TR) Cut Tape (CT) Digi-Reel®

Drain to Source Voltage (Vdss) : 650 V

Vgs (Max) : ±30V

Product Status : Not For New Designs

Input Capacitance (Ciss) (Max) @ Vds : 730 pF @ 400 V

Mounting Type : Surface Mount

Series : SuperFET® III

Supplier Device Package : D-PAK (TO-252)

Mfr : onsemi

Current - Continuous Drain (Id) @ 25°C : 10A (Tc)

Power Dissipation (Max) : 83W (Tc)

Technology : MOSFET (Metal Oxide)

Base Product Number : FCD360

Description : MOSFET N-CH 650V 10A DPAK