SIHB24N80AE-GE3

Category : Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs

FET Type : N-Channel

FET Feature : -

Product Status : Active

Mounting Type : Surface Mount

Package : Tube

Vgs(th) (Max) @ Id : 4V @ 250µA

Series : -

Vgs (Max) : ±30V

Gate Charge (Qg) (Max) @ Vgs : 89 nC @ 10 V

Supplier Device Package : D²PAK (TO-263)

Rds On (Max) @ Id, Vgs : 184mOhm @ 10A, 10V

Mfr : Vishay Siliconix

Operating Temperature : -55°C ~ 150°C (TJ)

Input Capacitance (Ciss) (Max) @ Vds : 1836 pF @ 100 V

Drain to Source Voltage (Vdss) : 800 V

Power Dissipation (Max) : 208W (Tc)

Package / Case : TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Current - Continuous Drain (Id) @ 25°C : 21A (Tc)

Technology : MOSFET (Metal Oxide)

Base Product Number : SIHB24

Description : MOSFET N-CH 800V 21A D2PAK