IRFBE30SPBF

Category : Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs

FET Feature : -

Vgs(th) (Max) @ Id : 4V @ 250µA

Operating Temperature : -55°C ~ 150°C (TJ)

Package / Case : TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Gate Charge (Qg) (Max) @ Vgs : 78 nC @ 10 V

Rds On (Max) @ Id, Vgs : 3Ohm @ 2.5A, 10V

FET Type : N-Channel

Drive Voltage (Max Rds On, Min Rds On) : 10V

Package : Tube

Drain to Source Voltage (Vdss) : 800 V

Vgs (Max) : ±20V

Product Status : Active

Input Capacitance (Ciss) (Max) @ Vds : 1300 pF @ 25 V

Mounting Type : Surface Mount

Series : -

Supplier Device Package : D²PAK (TO-263)

Mfr : Vishay Siliconix

Current - Continuous Drain (Id) @ 25°C : 4.1A (Tc)

Power Dissipation (Max) : 125W (Tc)

Technology : MOSFET (Metal Oxide)

Base Product Number : IRFBE30

Description : MOSFET N-CH 800V 4.1A D2PAK