NVH4L022N120M3S

Category : Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs

Gate Charge (Qg) (Max) @ Vgs : 151 nC @ 18 V

Product Status : Active

Mounting Type : Through Hole

Package : Tube

Input Capacitance (Ciss) (Max) @ Vds : 3175 pF @ 800 V

Series : Automotive, AEC-Q101

Vgs (Max) : +22V, -10V

Vgs(th) (Max) @ Id : 4.4V @ 20mA

Supplier Device Package : TO-247-4L

Rds On (Max) @ Id, Vgs : 30mOhm @ 40A, 18V

Mfr : onsemi

Operating Temperature : -55°C ~ 175°C (TJ)

FET Type : N-Channel

Drive Voltage (Max Rds On, Min Rds On) : 18V

Power Dissipation (Max) : 352W (Tc)

Package / Case : TO-247-4

Drain to Source Voltage (Vdss) : 1200 V

Current - Continuous Drain (Id) @ 25°C : 68A (Tc)

Technology : SiCFET (Silicon Carbide)

FET Feature : -

Description : SIC MOS TO247-4L 22MOHM 1200V