SQ2361AEES-T1_GE3

Transistor Polarity : P-Channel

Technology : Si

Id - Continuous Drain Current : - 2.8 A

Mounting Style : SMD/SMT

Tradename : TrenchFET

Minimum Operating Temperature : - 55 C

Package / Case : SOT-23-3

Maximum Operating Temperature : + 175 C

Channel Mode : Enhancement

Vds - Drain-Source Breakdown Voltage : - 60 V

Packaging : Reel

Vgs th - Gate-Source Threshold Voltage : - 2.5 V

Product Category : MOSFET

Rds On - Drain-Source Resistance : 0.13 Ohms

Number of Channels : 1 Channel

Vgs - Gate-Source Voltage : +/- 20 V

Qg - Gate Charge : 15 nC

Manufacturer : Vishay Semiconductors

Description : MOSFET -60V Vds +/-20V Vgs AEC-Q101 Qualified