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SQ2315ES-T1_GE3

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SQ2315ES-T1_GE3

Transistor Polarity : P-Channel

Technology : Si

Id - Continuous Drain Current : - 5 A

Mounting Style : SMD/SMT

Tradename : TrenchFET

Minimum Operating Temperature : - 55 C

Package / Case : SOT-23-3

Maximum Operating Temperature : + 175 C

Channel Mode : Enhancement

Vds - Drain-Source Breakdown Voltage : - 12 V

Packaging : Reel

Vgs th - Gate-Source Threshold Voltage : - 1 V

Product Category : MOSFET

Rds On - Drain-Source Resistance : 0.042 Ohms

Number of Channels : 1 Channel

Vgs - Gate-Source Voltage : +/- 8 V

Qg - Gate Charge : 13 nC

Manufacturer : Siliconix / Vishay

Description : MOSFET P-Channel 12V AEC-Q101 Qualified

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The SQ2315ES-T1_GE3,from Siliconix / Vishay,is MOSFET.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “online chat” or send a quote to us!

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